|Light irradiation-controlled nonvolatile charge memory. Left: schematic of the memory device. Right: the optical-controlled writing and erasing process of source-drain current. (Courtesy: Q Li et al J. Phys. D: Appl. Phys. 10.1088/1361-6463/ab5737)|
Topics: Applied Physics, Device Physics, Electrical Engineering, Materials Science, Nanotechnology
Qinliang Li, Cailei Yuan and Ting Yu from Jiangxi Normal University, along with Qisheng Wang and Jingbo Li from South China Normal University, are developing nonvolatile charge memory devices with simple structures. Wang explains how the optically controllable devices combine the functions of light sensing and electrical storage.
The research is reported in full in Journal of Physics D: Applied Physics, published by IOP Publishing – which also publishes Physics World.
What was the motivation for the research and what problem were you trying to solve?
Nonvolatile memory devices are central to modern communication and information technology. Among various material systems, emerging two dimensional (2D) materials offer a promising platform for next-generation data-storage devices due to their unique planar structure and brilliant electronic properties. However, 2D materials-based nonvolatile memory devices have complicated architectures with multilayer stacking of 2D materials, metals, organics or oxides. This limits the capacity for device miniaturization, scalability and integration functionality.
In this work, we are trying to design a nonvolatile charge memory with simple device architecture. We also expect to explore a new type of optical control on the charge storage devices, which may bring us smart operation on data deposition and communication.
Nonvolatile charge memory device shows excellent room-temperature performance, Physics World
Qisheng Wang is professor at the Institute of Semiconductor Science and Technology, South China Normal University